C3M0045065K - WOLFSPEED, INC. - GEN 3 650V 49A SIC MOSFET | |
Packaging | Tube |
Package / Case | TO-247-4 |
Mounting Type | Through Hole |
Operating Temperature | -40°C ~ 175°C (TJ) |
Technology | SiCFET (Silicon Carbide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
Rds On (Max) @ Id, Vgs | 60mOhm @ 17.6A, 15V |
FET Feature | - |
Power Dissipation (Max) | 176W (Tc) |
Vgs(th) (Max) @ Id | 3.6V @ 4.84mA |
Supplier Device Package | TO-247-4L |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Vgs (Max) | +19V, -8V |
Drain to Source Voltage (Vdss) | 650 V |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 15 V |
Input Capacitance (Ciss) (Max) @ Vds | 1621 pF @ 600 V |